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Silver gallium diselenide (AgGaSe2) is a semiconductor compound having an energy bangap of 1.7 eV, a value that is favorable for the room temperature radiation detection application. The starting material was synthesized from high purity elemental starting materials: 5N purity Se, 6N purity Ag, and 7N purity Ga. The crystals were grown at 880 °C in a three-zone semi-transparent gold-coated horizontal furnace. High resistivity (1.4 x 1011 ohm-cm) material was obtained and radiation detectors were fabricated. The response to gamma and alpha particles will be reported along with an analysis of the mobility - trapping time product for this novel material.
Utpal N. Roy,Michael Groza,Yunlong Cui,Arnold Burger,Zane W. Bell, andDonald A. Carpenter
"Crystal growth, characterization, and fabrication of AgGaSe2 crystals as novel material for room-temperature radiation detectors", Proc. SPIE 5540, Hard X-Ray and Gamma-Ray Detector Physics VI, (21 October 2004); https://doi.org/10.1117/12.563890
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Utpal N. Roy, Michael Groza, Yunlong Cui, Arnold Burger, Zane W. Bell, Donald A. Carpenter, "Crystal growth, characterization, and fabrication of AgGaSe2 crystals as novel material for room-temperature radiation detectors," Proc. SPIE 5540, Hard X-Ray and Gamma-Ray Detector Physics VI, (21 October 2004); https://doi.org/10.1117/12.563890