Thin structure of near-field emission of semiconductor laser

K. P. Gaikovich; V. F. Dryakhlushin

doi:10.1117/12.583479

24 September 2004 Thin structure of near-field emission of semiconductor laser

K. P. Gaikovich, V. F. Dryakhlushin

Proceedings Volume 5582, Advanced Optoelectronics and Lasers; (2004) https://doi.org/10.1117/12.583479
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

A near-field structure of the semiconductor laser emission is revealed using image deconvolution of SNOM measurements. The comparison with the atomic-force microscope measurements of the emitting surface relief shows that inhomogenities of this structure are likely related to nano-scale inhomogeneities of the emitting laser surface. To retrieve the true structure of near-field laser emission taking into account the probe transfer function, the image deconvolution method based on the Tikhonov's method of generalized discrepancy was used. As a result, in the SNOM measurements small (3-4%) variations with a spatial size of about 50 nm have been discerned.

Citation Download Citation

K. P. Gaikovich and V. F. Dryakhlushin "Thin structure of near-field emission of semiconductor laser", Proc. SPIE 5582, Advanced Optoelectronics and Lasers, (24 September 2004); https://doi.org/10.1117/12.583479

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