980-nm high-power strained quantum well laser array fabricated by MBE

Xin Gao; Baoxue Bo; Ling Wang; Yi Qu

doi:10.1117/12.575258

31 January 2005 980-nm high-power strained quantum well laser array fabricated by MBE

Xin Gao, Baoxue Bo, Ling Wang, Yi Qu

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.575258
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

980nm InGaAs/GaAs separate confinement heterostructure (SCH) single quantum well (SQW) laser is grown by MBE. Photoluminescence and X-ray double crystal diffraction of the epilayer demonstrate good optical and crystalline quality. A QCW output power of 64.1W is achieved for a cm bar, which is limited by the current source. No thermal rollover in the output power is observed. The threshold current is 18.6A at 15°C. The slope efficiency is 1.14W/A with a corresponding power efficiency of 31.7%.

Citation Download Citation

Xin Gao, Baoxue Bo, Ling Wang, and Yi Qu "980-nm high-power strained quantum well laser array fabricated by MBE", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.575258

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