Paper
23 February 2005 Ion beam lithography with single ions
Andrew Alves, Sean M. Hearne, P. Reichart, Reiner Siegele, David N. Jamieson, Peter N. Johnston
Author Affiliations +
Proceedings Volume 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II; (2005) https://doi.org/10.1117/12.582191
Event: Smart Materials, Nano-, and Micro-Smart Systems, 2004, Sydney, Australia
Abstract
Although sub-micron structures have been fabricated with ion beam lithography using focused MeV ions, the best resolution of the method has not yet been approached. The best resolution is potentially around 10 nm which is the diameter of latent damage produced by the passage of a single fast ion through sensitive materials where the ion range could be tens of micrometres. In principle, the latent damage can be developed to create very high aspect ratio nanostructures. We call this technique single ion nanolithography. In order to approach the ultimate resolution of lithography with single ions we investigate the resist material, the exposure as a function of ion type and development parameters. To implement the technique we have developed a novel strategy that employs a resist film on an active substrate that functions as a detector sensitive to single ion impacts. Together with a focused microbeam, the precise control of ion fluence attained by counting ion impacts allows us to perform a convenient systematic study of the track formation and seek conditions where single ion tracks can be produced. We report here the current status of the investigations using PMMA and CR-39 resists which are shown to be sensitive to single ions. A key issue is also the post-development imaging method.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew Alves, Sean M. Hearne, P. Reichart, Reiner Siegele, David N. Jamieson, and Peter N. Johnston "Ion beam lithography with single ions", Proc. SPIE 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, (23 February 2005); https://doi.org/10.1117/12.582191
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Cited by 4 scholarly publications.
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KEYWORDS
Ions

Polymethylmethacrylate

Etching

Ion beam lithography

Lithography

Atomic force microscopy

Sensors

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