Looking into the crystal ball: future device learning using hybrid e-beam and optical lithography

S. E. Steen; S. J. McNab; L. Sekaric; I. Babich; J. Patel; J. Bucchignano; M. Rooks; D. M. Fried; A. W. Topol; J. R. Brancaccio; R. Yu; J. M. Hergenrother; J. P. Doyle; R. Nunes; R. G. Viswanathan; S. Purushothaman; M. B. Rothwell

doi:10.1117/12.600925

6 May 2005 Looking into the crystal ball: future device learning using hybrid e-beam and optical lithography (Keynote Paper)

S. E. Steen, S. J. McNab, L. Sekaric, I. Babich, J. Patel, J. Bucchignano, M. Rooks, D. M. Fried, A. W. Topol, J. R. Brancaccio, R. Yu, J. M. Hergenrother, J. P. Doyle, R. Nunes, R. G. Viswanathan, S. Purushothaman, M. B. Rothwell

Author Affiliations +

Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.600925
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Semiconductor process development teams are faced with increasing process and integration complexity while the time between lithographic capability and volume production has remained more or less constant over the last decade. Lithography tools have often gated the volume checkpoint of a new device node on the ITRS roadmap. The processes have to be redeveloped after the tooling capability for the new groundrule is obtained since straight scaling is no longer sufficient. In certain cases the time window that the process development teams have is actually decreasing. In the extreme, some forecasts are showing that by the time the 45nm technology node is scheduled for volume production, the tooling vendors will just begin shipping the tools required for this technology node. To address this time pressure, IBM has implemented a hybrid-lithography strategy that marries the advantages of optical lithography (high throughput) with electron beam direct write lithography (high resolution and alignment capability). This hybrid-lithography scheme allows for the timely development of semiconductor processes for the 32nm node, and beyond. In this paper we will describe how hybrid lithography has enabled early process integration and device learning and how IBM applied e-beam & optical hybrid lithography to create the world's smallest working SRAM cell.

Citation Download Citation

S. E. Steen, S. J. McNab, L. Sekaric, I. Babich, J. Patel, J. Bucchignano, M. Rooks, D. M. Fried, A. W. Topol, J. R. Brancaccio, R. Yu, J. M. Hergenrother, J. P. Doyle, R. Nunes, R. G. Viswanathan, S. Purushothaman, and M. B. Rothwell "Looking into the crystal ball: future device learning using hybrid e-beam and optical lithography (Keynote Paper)", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.600925

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available