Mask fabrication towards sub-10 nm imprint lithography

Jian Gu; Chun-Ping Jen; Qihuo Wei; Chiafu Chou; Frederic Zenhausern

doi:10.1117/12.600207

6 May 2005 Mask fabrication towards sub-10 nm imprint lithography

Jian Gu, Chun-Ping Jen, Qihuo Wei, Chiafu Chou, Frederic Zenhausern

Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.600207
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

We report for the first time the use of orientation dependent etching (ODE) of (110) c-Si in sidewall thin film technology for imprint mask fabrication with low line edge roughness (LER) over a large area. Oxidation is used for sidewall thin film formation with a good critical dimension control. 2-dimensional oxidation effects are discussed. Features down to 12 nm have been fabricated successfully. Simulation shows that the fabricated oxide line is strong enough to imprint both thermoplastic and photo-curable imprint resists.

Citation Download Citation

Jian Gu, Chun-Ping Jen, Qihuo Wei, Chiafu Chou, and Frederic Zenhausern "Mask fabrication towards sub-10 nm imprint lithography", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.600207

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available