Protection of collector optics in an LPP based EUV source

C. L. Rettig; O. V. Khodykin; J. R. Hoffman; W. F. Marx; N. R. Bowering; E. Vargas; A. I. Ershov; I. V. Fomenkov; W. N. Partlo

doi:10.1117/12.601517

6 May 2005 Protection of collector optics in an LPP based EUV source

C. L. Rettig, O. V. Khodykin, J. R. Hoffman, W. F. Marx, N. R. Bowering, E. Vargas, A. I. Ershov, I. V. Fomenkov, W. N. Partlo

Author Affiliations +

Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.601517
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

In a laser produced plasma (LPP) EUV source the multilayer mirror (MLM) collector optic will be exposed to a flux of energetic ions and neutral atoms ejected from the plasma as well as condensable vapor from excess target material. We are investigating various techniques for reducing the contamination flux and for in-situ removal of the contamination. The protection strategies under investigation must be compatible with gaseous and condensable target materials such as Xe, Sn, In, Li, and other elements. The goal is to develop MLM structures that can withstand elevated temperatures and develop protective barrier coatings that reduce erosion of the mirror surface. Results of MLM exposure to energetic ion beams and thermal atomic sources are presented. Changes in EUV reflectivity of MLM structures after exposure to ions and deposition of target material have been performed on samples cleaned by these developmental processes. In this paper, we will summarize our initial results in these areas and present techniques for mitigation of MLM damage from the source.

Citation Download Citation

C. L. Rettig, O. V. Khodykin, J. R. Hoffman, W. F. Marx, N. R. Bowering, E. Vargas, A. I. Ershov, I. V. Fomenkov, and W. N. Partlo "Protection of collector optics in an LPP based EUV source", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.601517

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