Inorganic polymer resists for EUVL

Juan Pablo Bravo-Vasquez; Young-Je Kwark; Christopher Kemper Ober; Heidi B. Cao; Hai Deng

doi:10.1117/12.600172

4 May 2005 Inorganic polymer resists for EUVL

Juan Pablo Bravo-Vasquez, Young-Je Kwark, Christopher Kemper Ober, Heidi B. Cao, Hai Deng

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.600172
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The uniqueness in extreme ultraviolet (EUV) Lithography is encouraging the development of new polymer platform as a resist material. The absorbance characteristic of materials at the EUV region demands the use of polymers containing highly transparent silicon atoms. Also very low level of outgassing is required due to the vacuum environment during exposure and the extremely high cost of the EUV tools. To fulfill those requirements, two types of silicon backbone polymers were studied; chemically amplifiable polysilanes and polysilsesquiazanes. In the former case, the direct incorporation of acid sensitive groups into the polymer backbone allows for a solubility switch upon exposure. In the later system, this nitrogen-containing silicon polymer can be cleaved upon exposure to induce a solubility switch. These polymers possess many essential properties including low absorbance, low outgassing, and high sensitivity. Polymers having different substituents and branching ratios were synthesized. The properties of the polymers will be discussed relating to their lithographic performances.

Citation Download Citation

Juan Pablo Bravo-Vasquez, Young-Je Kwark, Christopher Kemper Ober, Heidi B. Cao, and Hai Deng "Inorganic polymer resists for EUVL", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.600172

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