Use Of Thermal Nitridation To Fabricate Low Loss Planar Optical Waveguides In Si0[sub]2[/sub]

David E. Zelmon; Howard E. Jackson; Joseph T. Boyd

doi:10.1117/12.950754

11 September 1985 Use Of Thermal Nitridation To Fabricate Low Loss Planar Optical Waveguides In Si0₂

David E. Zelmon, Howard E. Jackson, Joseph T. Boyd

Proceedings Volume 0578, Integrated Optical Circuit Engineering II; (1985) https://doi.org/10.1117/12.950754
Event: 1985 Cambridge Symposium, 1985, Cambridge, United States

Abstract

Low loss planar optical waveguides have been fabricated by thermal nitridation of thick silicon dioxide films. The waveguides were formed by oxidizing silicon wafers at 1100°C in steam and then exposing them to an atmosphere of electronic grade ammonia for periods between one and ten days. Measurements of waveguide loss, effective refractive index and refractive index were performed as functions of nitridation time. Losses for these waveguides ranged between 0.06 and 0.31 dB/cm. Auger electron spectroscopy and ellipsometry were used to characterize the nitrided films. The waveguide loss data were compared with calculations of optical waveguide properties.

Citation Download Citation

David E. Zelmon, Howard E. Jackson, and Joseph T. Boyd "Use Of Thermal Nitridation To Fabricate Low Loss Planar Optical Waveguides In Si0₂", Proc. SPIE 0578, Integrated Optical Circuit Engineering II, (11 September 1985); https://doi.org/10.1117/12.950754

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