Paper
7 June 2005 Light emission from erbium-doped nanocrystalline silicon/silicon dioxide layers under strong optical excitation
Pavel K. Kashkarov, Olga A. Shalygina, Denis M. Zhigunov, Dmitri A. Sapun, Sergei A. Teterukov, Victor Yu. Timoshenko, Johannes Heitmann, Michael Schmidt, Margit Zacharias, Kenji Imakita, Minoru Fujii, Shinji Hayashi
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Proceedings Volume 5850, Advanced Laser Technologies 2004; (2005) https://doi.org/10.1117/12.633527
Event: Advanced Laser Technologies 2004, 2004, Rome and Frascati, Italy
Abstract
Photoluminescence properties of Er-doped nanocrystalline Si/ Si02 structures have been investigated under strong optical excitation. The energy of optical excitation of Si nanocrystals was shown to be almost completely transferred to Er3+ ions in surrounding Si02. It was found that at high pump intensity the energy transfer process competes successfully with nonradiative Auger-recombination in Si nanocrystals. At high excitation level the population inversion of Er3+ ions was achieved and a decrease of the decay time of the photoluminescence at 1.5 μm was observed. Possible mechanisms of the shortening of the Er3+ ion lifetime are discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pavel K. Kashkarov, Olga A. Shalygina, Denis M. Zhigunov, Dmitri A. Sapun, Sergei A. Teterukov, Victor Yu. Timoshenko, Johannes Heitmann, Michael Schmidt, Margit Zacharias, Kenji Imakita, Minoru Fujii, and Shinji Hayashi "Light emission from erbium-doped nanocrystalline silicon/silicon dioxide layers under strong optical excitation", Proc. SPIE 5850, Advanced Laser Technologies 2004, (7 June 2005); https://doi.org/10.1117/12.633527
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KEYWORDS
Ions

Silicon

Nanocrystals

Excitons

Energy transfer

Luminescence

Erbium

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