Efficient modeling of immersion lithography in an aggressive RET mask synthesis flow

Min Bai; Junjiang Lei; Lin Zhang; James P. Shiely

doi:10.1117/12.617228

28 June 2005 Efficient modeling of immersion lithography in an aggressive RET mask synthesis flow

Min Bai, Junjiang Lei, Lin Zhang, James P. Shiely

Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617228
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan

Abstract

Immersion lithography has been accepted as the major breakthrough for enabling next generation deep subwavelength chip production. As it extends the resolution capability of optical lithography to the next technology node, it brings fresh challenges to resolution enhancement techniques (RET). Accurate lithography modeling becomes even more critical for RET at the sub-65nm nodes. On the other hand, immersion models need to be fully compatible within the context of existing optical proximity correction (OPC) flow. With the hyper NA approach, modeling of immersion lithography requires full vector treatment of the electric fields in the propagating light wave. We developed a comprehensive vector model that considers not only the plane wave decomposition from the mask to the wafer plane, but also the light propagation through a thin film stack on the wafer. With the integration of this model into Synopsys OPC modeling tool ProGen, we have simulated and demonstrated several important enhancements introduced by immersion. In the mean time, the modeling and correction flow for immersion is completely compatible with the current OPC infrastructure.

Citation Download Citation

Min Bai, Junjiang Lei, Lin Zhang, and James P. Shiely "Efficient modeling of immersion lithography in an aggressive RET mask synthesis flow", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617228

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