Cooled InAs photodiodes for IR applications

A. Sukach; V. Tetyorkin; G. Olijnuk; V. Lukyanenko; A. Voroschenko

doi:10.1117/12.622195

29 September 2005 Cooled InAs photodiodes for IR applications

A. Sukach, V. Tetyorkin, G. Olijnuk, V. Lukyanenko, A. Voroschenko

Proceedings Volume 5957, Infrared Photoelectronics; 59571A (2005) https://doi.org/10.1117/12.622195
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland

Abstract

InAs photodiodes were prepared by cadmium diffusion into substrates with n-type conductivity. Formation of compensated region with concentration of free carriers ~10¹⁵ cm^-3 is proved from measurements of barrier capacitance and transport mechanisms. The trap-assisted tunneling current is calculated for InAs photodiodes for the fist time. In this paper we proposed a model of the trap-assisted tunneling current which is caused by nonuniform distribution of impurity atoms and native defects. The trap-assisted tunneling current is caused by small areas of the junction which are characterized by increased concentration of defects and may be associated with dislocations, periphery of the junction or impurity fluctuations. Diffused photodiodes have higher threshold parameters in comparison with commercially available ones. Also, they exhibit higher photosensitivity in the short wavelength region due to existence of the surface built-in electric field.

Citation Download Citation

A. Sukach, V. Tetyorkin, G. Olijnuk, V. Lukyanenko, and A. Voroschenko "Cooled InAs photodiodes for IR applications", Proc. SPIE 5957, Infrared Photoelectronics, 59571A (29 September 2005); https://doi.org/10.1117/12.622195

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