Nanometrology device standards for scanning probe microscopes and processes for their fabrication and usage

Peter Moeck

doi:10.1117/12.629785

7 November 2005 Nanometrology device standards for scanning probe microscopes and processes for their fabrication and usage

Peter Moeck

Author Affiliations +

Proceedings Volume 6000, Two- and Three-Dimensional Methods for Inspection and Metrology III; 60000Q (2005) https://doi.org/10.1117/12.629785
Event: Optics East 2005, 2005, Boston, MA, United States

Abstract

Typical nanometrology device standards for scanning probe microscopes that are produced by the top-down approach are described first. This is followed by a discussion of some of the atomic precision standards that nature provides. Since there is an order of magnitude feature size gap between these two classes of nanometrology standards, a novel class of nanometrology device standards that fills this gap is proposed together with its intrinsically inexpensive "bottom-up" fabrication process. This nanofabrication process is heteroepitaxy of semiconductors or ceramics that are morphologically, structurally, and chemically stable in typical laboratory environments. For special crystallographic orientations of the substrates and special material combinations, the heteroepitaxy process leads to self-assembled arrays of nano-islands with a known morphology, dimensions in the range of a few nanometers to a few tens of nanometers, and large height-to-width aspect ratios. Suitable crystallographic directions are then marked macroscopically on the nanometrology device standards in order to be able to direct the scanning probe scans in certain directions for precise calibration procedures.

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Peter Moeck "Nanometrology device standards for scanning probe microscopes and processes for their fabrication and usage", Proc. SPIE 6000, Two- and Three-Dimensional Methods for Inspection and Metrology III, 60000Q (7 November 2005); https://doi.org/10.1117/12.629785

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