Monolithic 1310nm buried heterostructure VCSEL using InGaAsP/InP DBR reflectors

Daniel A. Francis; David B. Young; Jeff Walker; Ashish Verma; Dave Gold; Chris Decker

doi:10.1117/12.633254

25 October 2005 Monolithic 1310nm buried heterostructure VCSEL using InGaAsP/InP DBR reflectors

Daniel A. Francis, David B. Young, Jeff Walker, Ashish Verma, Dave Gold, Chris Decker

Proceedings Volume 6013, Optoelectronic Devices: Physics, Fabrication, and Application II; 60130A (2005) https://doi.org/10.1117/12.633254
Event: Optics East 2005, 2005, Boston, MA, United States

Abstract

We report on the first monolithic 1310 nm Vertical Cavity Surface Emitting Lasers (VCSELs) with top and bottom InGaAsP/InP distributed Bragg reflectors (DBRs). The lasers show single mode powers over 1.0 mW at room temperature and single mode powers up to 0.5 mW at 85^oC. The lasers, designed to be single mode, have side mode suppression ratios exceeding 45 dB over all temperatures and all powers.

Citation Download Citation

Daniel A. Francis, David B. Young, Jeff Walker, Ashish Verma, Dave Gold, and Chris Decker "Monolithic 1310nm buried heterostructure VCSEL using InGaAsP/InP DBR reflectors", Proc. SPIE 6013, Optoelectronic Devices: Physics, Fabrication, and Application II, 60130A (25 October 2005); https://doi.org/10.1117/12.633254

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