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9 December 2005 Study of the frequency spectrum characteristics of ultra-fast photoconductive semiconductor switches
Ren-Xi Gong, Ma-li Huang, Yi-Men Zhang, Shun-Xiang Shi, Yu-Ming Zhang
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Proceedings Volume 6024, ICO20: Optical Devices and Instruments; 602411 (2005) https://doi.org/10.1117/12.666843
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China
Abstract
According to microwave and circuit theory, the transient response model is established after optically controlled photoconductive semiconductor switches (PCSSs) are radiated by ultra-short light pulse. A method for characterizing frequency spectrum characteristics of PCSSs is presented. A deep investigation of the effect of some structural and physical parameters on the frequency characteristics of PCSSs is made. The findings show that the carrier life and absorption coefficient of the photoconductive material for manufacturing the switches, the width of the gap, the pulse width of the incident light, the gap capacitance, lead and parasitical inductance have a great effect on the frequency characteristics of PCSSs. PCSSs have ability to produce THz electromagnetic radiation and can be as Teraherz radiation source.
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Ren-Xi Gong, Ma-li Huang, Yi-Men Zhang, Shun-Xiang Shi, and Yu-Ming Zhang "Study of the frequency spectrum characteristics of ultra-fast photoconductive semiconductor switches", Proc. SPIE 6024, ICO20: Optical Devices and Instruments, 602411 (9 December 2005); https://doi.org/10.1117/12.666843
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KEYWORDS
Switches
Capacitance
Inductance
Semiconductors
Ultrafast phenomena
Absorption
Lead
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