Na0.5Bi0.5TiO3-based ferroelectric thin films

Zh. Wang; Ch. H. Yang; H. Z. Xu; L. J. Qin; Y. G. Yang

doi:10.1117/12.667710

23 January 2006 Na_0.5Bi_0.5TiO₃-based ferroelectric thin films

Zh. Wang, Ch. H. Yang, H. Z. Xu, L. J. Qin, Y. G. Yang

Proceedings Volume 6029, ICO20: Materials and Nanostructures; 60290U (2006) https://doi.org/10.1117/12.667710
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

Sodium bismuth titanate (Na_0.5Bi_0.5TiO₃, NBT) is considered to be an excellent candidate for a lead-free piezoelectric material from the viewpoint of environmental protection. The optimum temperature of crystallinity is 650°C. The films exhibit a well-defined hysteresis loop with a remnant polarization 2Pr of about 1 μC/cm² and a coercive voltage V_c of approximately 0.9V. The films also show good insulating property at room temperature. The high frequency C-V curve is indicative of good film/substrate interface characteristic. The fixed charge density (N_fc) and the surface state density (N_ss) are considered to be adequate for a ferroelectric field effect transistor operation. Electrical measurements results show that this kind of films have a potential practice for device applications such as memory and switching devices.

Citation Download Citation

Zh. Wang, Ch. H. Yang, H. Z. Xu, L. J. Qin, and Y. G. Yang "Na_0.5Bi_0.5TiO₃-based ferroelectric thin films", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60290U (23 January 2006); https://doi.org/10.1117/12.667710

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