New proximity effect correction for under 100nm patterns

Masahiro Shoji; Nobuyasu Horiuchi; Tomoyuki Chikanaga; Takashi Niinuma; Dai Tsunoda

doi:10.1117/12.656079

24 March 2006 New proximity effect correction for under 100nm patterns

Masahiro Shoji, Nobuyasu Horiuchi, Tomoyuki Chikanaga, Takashi Niinuma, Dai Tsunoda

Proceedings Volume 6151, Emerging Lithographic Technologies X; 615128 (2006) https://doi.org/10.1117/12.656079
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

As pattern size becomes very small, it has been getting difficult to correct an EB proximity effect accurately. We have developed a new proximity effect correction which corrects dose by simulating the pattern width. It can correct accurately a pattern of 100nm and below.

Citation Download Citation

Masahiro Shoji, Nobuyasu Horiuchi, Tomoyuki Chikanaga, Takashi Niinuma, and Dai Tsunoda "New proximity effect correction for under 100nm patterns", Proc. SPIE 6151, Emerging Lithographic Technologies X, 615128 (24 March 2006); https://doi.org/10.1117/12.656079

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