Development of multi-function hard mask to simplify process step

Kilyoung Lee; Samyoung Kim; Geunsu Lee; Sungkwon Lee; Junhee Cho; Wonkyu Kim; Cheolkyu Bok; Hyeongsoo Kim; Seungchan Moon; Jinwoong Kim

doi:10.1117/12.656870

11 April 2006 Development of multi-function hard mask to simplify process step

Kilyoung Lee, Samyoung Kim, Geunsu Lee, Sungkwon Lee, Junhee Cho, Wonkyu Kim, Cheolkyu Bok, Hyeongsoo Kim, Seungchan Moon, Jinwoong Kim

Author Affiliations +

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61532V (2006) https://doi.org/10.1117/12.656870
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

ArF lithography has been driven into sub-100 nm dimensions using high numerical apertures, phase-shift mask, modified illumination, and optical proximity correction. As feature size continues to shrink, photoresist thickness as an imaging layer has been decreased for the improvement of lithographic process window and pattern collapse margin. Moreover, ArF photoresist has the inherent demerit of poor etch resistance in comparison with KrF photoresist and we have to use inorganic hard mask materials such as silicon-nitride, -oxide, poly-silicon, and silicon oxynitride as a pattern transfer layer. The cost-of-ownership (COO) of CVD process related to the application of inorganic hard mask is much more expensive than that of spin-on process. Therefore, several processes including bi-layer resist process (BLR), and tri-layer resist process (TLR)¹ have been investigated. This paper will focus on TLR process consisted of multi-function hard mask (MFHM) material and spin on carbon (SOC) material.

Citation Download Citation

Kilyoung Lee, Samyoung Kim, Geunsu Lee, Sungkwon Lee, Junhee Cho, Wonkyu Kim, Cheolkyu Bok, Hyeongsoo Kim, Seungchan Moon, and Jinwoong Kim "Development of multi-function hard mask to simplify process step", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532V (11 April 2006); https://doi.org/10.1117/12.656870

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available