Molecular contamination control technologies for high NA 193nm lithography

Akihiro Imai; Takashi Tanahashi; Kazuki Yamana; Toshiro Nakano; Nobuhiro Takahashi; Masaharu Shioguchi; Junichi Kitano

doi:10.1117/12.656871

29 March 2006 Molecular contamination control technologies for high NA 193nm lithography

Akihiro Imai, Takashi Tanahashi, Kazuki Yamana, Toshiro Nakano, Nobuhiro Takahashi, Masaharu Shioguchi, Junichi Kitano

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 615332 (2006) https://doi.org/10.1117/12.656871
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

While the current standard for NA (Numerical Aperture) for the semiconductor resist process is 193 nm High NA, use of the 193 nm immersion exposure process is growing and almost ready for application in mass production. With the growing trend toward the use of finer line processes in the manufacture of semiconductor devices, the need for cleanliness of the ambient atmosphere surrounding the silicon wafer has also been increasing. In addition to ammonia, that has hitherto been the main target for elimination, the concentration of other chemicals, such as amines and N-methyl-2-pyrrolidone (NMP), need to be kept sufficiently low for the new processes. Therefore, the role of chemical filters has become an essential one. We conducted a study on the dependency of chemical filters on the molecular diffusivity of target gas species, and, based on this data, developed a filter that eliminates amines. The filter has a honeycomb structure with a wide gas-contacting area, and consists of an ion-exchange resin that has received special treatment. The filter has a greatly improved gas capture efficiency (>99.8% for ammonia, >98% for triethylamine and NMP) and a very large adsorption capacity, which enables a 50% reduction of the filter volume compared with currently available chemical filters.

Citation Download Citation

Akihiro Imai, Takashi Tanahashi, Kazuki Yamana, Toshiro Nakano, Nobuhiro Takahashi, Masaharu Shioguchi, and Junichi Kitano "Molecular contamination control technologies for high NA 193nm lithography", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615332 (29 March 2006); https://doi.org/10.1117/12.656871

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