40-100nm contact-hole processes of ZEP520A e-beam resist on PCM prototyping applications

Wei-Su Chen; Yen Chuo; Hong-Hui Hsu; Yi-Chan Chen; Chien-Min Lee; Ming-Jer Kao; Ming-Jinn Tsai

doi:10.1117/12.656192

29 March 2006 40-100nm contact-hole processes of ZEP520A e-beam resist on PCM prototyping applications

Wei-Su Chen, Yen Chuo, Hong-Hui Hsu, Yi-Chan Chen, Chien-Min Lee, Ming-Jer Kao, Ming-Jinn Tsai

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 615349 (2006) https://doi.org/10.1117/12.656192
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

ZEP520A e-beam processes for 40-100nm contact holes were studied for application of phase change memory (PCM) device prototyping. Resist baking, e-beam and development process parameters were investigated on the isolated and semi-dense (1:3) contact holes. PAB temperature for minimum exposure dose-to-size (E_SIZE) is 70°C. E_SIZE of 200°C PAB is 250 μC/cm² while that of 70°C is 120 μC/cm² for 100nm contact hole. E_SIZE of contact hole increases very quickly as the CD gets smaller than 60nm. CDs with beam currents of 100pA and 200pA are nearly the same while that with 2nA differs much. Sidewall profiles of contact holes exposed by 100pA and 200pA are near 90° while that exposed with 2nA is tapered. E_SIZE decreases with development time. Bottom of contact hole is broadened for prolonged development time. CDs after PDB are not changed. There is little difference in CD between isolated and semi-dense patterns. CD uniformity on the corner and center of contact-hole array are around 5% (+/-3σ), showing a very weak proximity effect. Inter-layer mix-and-match processes were applied to PCM manufacturing. Cross-shaped alignment marks results in the strongest signal waveform on TiW bottom electrode than oxide and TiN/Ti. Mix-and-match PCM device structure was, for the first time, ever demonstrated.

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Wei-Su Chen, Yen Chuo, Hong-Hui Hsu, Yi-Chan Chen, Chien-Min Lee, Ming-Jer Kao, and Ming-Jinn Tsai "40-100nm contact-hole processes of ZEP520A e-beam resist on PCM prototyping applications", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615349 (29 March 2006); https://doi.org/10.1117/12.656192

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KEYWORDS

Critical dimension metrology

Electrodes

Cadmium

Prototyping

Electron beam lithography

Deep ultraviolet

Photoresist processing

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