Influence of charged centers on transport characteristics of alternating current thin film electroluminescent devices

Mustafa M. Abdalla Ahmed; Pavel Tománek

doi:10.1117/12.675648

18 April 2006 Influence of charged centers on transport characteristics of alternating current thin film electroluminescent devices

Mustafa M. Abdalla Ahmed, Pavel Tománek

Author Affiliations +

Proceedings Volume 6180, Photonics, Devices, and Systems III; 61800B (2006) https://doi.org/10.1117/12.675648
Event: Photonics, Devices, and Systems III, 2005, Prague, Czech Republic

Abstract

Charged centers exist in the phosphor layer of common alternating current thin film electroluminescent devices. In this article, the electron scattering process by these centers is studied through phase shift analysis. The scattering rates in different cases are gained and compared with other important scattering processes. The electron transport process is simulated by means of the Monte Carlo method. Quantitative results about the influence of charged centers on electron kinetic energy are gained.

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Mustafa M. Abdalla Ahmed and Pavel Tománek "Influence of charged centers on transport characteristics of alternating current thin film electroluminescent devices", Proc. SPIE 6180, Photonics, Devices, and Systems III, 61800B (18 April 2006); https://doi.org/10.1117/12.675648

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