Paper
18 April 2006 Bistable laser diode with a multiple-divided contact stripe
Vítězslav Jeřábek, Ivan Hüttel, Václav Prajzler, Zdeněk Burian
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Proceedings Volume 6180, Photonics, Devices, and Systems III; 61800F (2006) https://doi.org/10.1117/12.675883
Event: Photonics, Devices, and Systems III, 2005, Prague, Czech Republic
Abstract
We report about theoretical results and experiments, which led to the demonstration of optical bistability on the specially modified laser diode (LD) created on the double heterostructure Ga1-xAl/GaAs with saturable absorbtion section. To prove the bistability, the time method for bistability impulse verification (BIV) by bistable laser diode samples of realized BLD were determined. Also the mathematic model of the W-A characteristic was derived, used for the simulation of the characteristic for the realized BLD. Element values of the electrical equivalent circuit of the BLD for small hanges of signal were calculated for selected operating points of the simulated W-A characteristics. The dependency of bistability on the temperature is monitored by measuring the BLD W-A characteristic.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vítězslav Jeřábek, Ivan Hüttel, Václav Prajzler, and Zdeněk Burian "Bistable laser diode with a multiple-divided contact stripe", Proc. SPIE 6180, Photonics, Devices, and Systems III, 61800F (18 April 2006); https://doi.org/10.1117/12.675883
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KEYWORDS
Bistability

Diodes

Mathematical modeling

Absorption

Bistable lasers

Heterojunctions

Semiconductor lasers

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