Complex simulation of electron process of deep submicron MOSFET based on energy balance equation

Victor V. Gergel; Marat N. Yakupov

doi:10.1117/12.683546

10 June 2006 Complex simulation of electron process of deep submicron MOSFET based on energy balance equation

Victor V. Gergel, Marat N. Yakupov

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601O (2006) https://doi.org/10.1117/12.683546
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

A new physico-mathematical model of the accelerated calculation of characteristics of deep sub-micron (≃100 nm) MOSFETs, which are being studied and used in modern microelectronics, is suggested. This model combines the advanced quasi-hydrodynamic description of high-field electron drift which is taken into account for thermo-diffusion component of the electron flow and used among the continuity equation so-called energy balance equation. The last controls the distribution of electron temperature flow, thereby determines the behavior of spatial changes of effective mobility in transistor's channels. Unique speed of software implementation of the model in a great measure is due to using special approximations in description of spatial-doped parameters of device stuctures, but allows the adequate account for spreading of source-drain regions, peculiarities of LDD engineering, halo implant effects in the substrate at the near channel with source and drain, gate poly-depletion effects and so on.

Citation Download Citation

Victor V. Gergel and Marat N. Yakupov "Complex simulation of electron process of deep submicron MOSFET based on energy balance equation", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601O (10 June 2006); https://doi.org/10.1117/12.683546

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KEYWORDS

Transistors

Field effect transistors

Instrument modeling

Oxides

Mathematical modeling

Microelectronics

Semiconductors

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