Simulation of physical processes in nanoelectronic devices with the use NANODEV system

I. I. Abramov; K. I. Abramov; I. A. Goncharenko; S. A. Ignatenko; A. P. Kazantsev; N. V. Kolomejtseva; A. M. Lavrinovich; S. N. Pavlenok; A. S. Strogova

doi:10.1117/12.683549

10 June 2006 Simulation of physical processes in nanoelectronic devices with the use NANODEV system

I. I. Abramov, K. I. Abramov, I. A. Goncharenko, S. A. Ignatenko, A. P. Kazantsev, N. V. Kolomejtseva, A. M. Lavrinovich, S. N. Pavlenok, A. S. Strogova

Author Affiliations +

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601Q (2006) https://doi.org/10.1117/12.683549
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

The results of physical process investigation of three classes of nanoelectronic devices, such as 1) single-electron tunneling (SET) devices, 2) resonant-tunneling structures (RTS's), 3) quantum wire (QW) devices are described in the paper. The single-electron 1D and 2D arrays, resonant-tunneling diodes (RTD's), interference T-transistors and quantum wires were simulated. Analysis was carried out for different material parameters and structure design. The main regularities of physical processes depending on mentioned parameters, applied voltage, temperature for devices from different materials are described. To simulate new models of SET devices of semiclassical approach which takes into account the influence of spatial quantization due to transversal dimensions and co-tunneling effect were used. In the framework of semiclassical approach and wave function formalism we considered scattering by different mechanisms in model to simulate various RTD's. Different scattering mechanisms can be taken into account for simulation of QW devices with the use of the Wigner-function formalism models. All new models have been included in simulation system of nanoelectronic devices NANODEV [1]. In the paper the results confirming the adequacy of the developed numerical models including a comparison with experimental data are presented. All investigations were carried out by PC on the base of Pentium-III processor.

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I. I. Abramov, K. I. Abramov, I. A. Goncharenko, S. A. Ignatenko, A. P. Kazantsev, N. V. Kolomejtseva, A. M. Lavrinovich, S. N. Pavlenok, and A. S. Strogova "Simulation of physical processes in nanoelectronic devices with the use NANODEV system", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601Q (10 June 2006); https://doi.org/10.1117/12.683549

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KEYWORDS

Nanoelectronics

Instrument modeling

Scattering

Quantum wells

Device simulation

Monte Carlo methods

Quantization

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