Numerical algorithms for modeling of diffusion of As implanted in Si at low energies and high fluences

F. F. Komarov; O. I. Velichko; A. M. Mironov; V. A. Tsurko; G. M. Zayats

doi:10.1117/12.683564

10 June 2006 Numerical algorithms for modeling of diffusion of As implanted in Si at low energies and high fluences

F. F. Komarov, O. I. Velichko, A. M. Mironov, V. A. Tsurko, G. M. Zayats

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601U (2006) https://doi.org/10.1117/12.683564
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and a new description of arsenic clustering are simultaneously taking into account. Simulation of As diffusion during rapid thermal annealing gives a reasonable agreement with the experimental data.

Citation Download Citation

F. F. Komarov, O. I. Velichko, A. M. Mironov, V. A. Tsurko, and G. M. Zayats "Numerical algorithms for modeling of diffusion of As implanted in Si at low energies and high fluences", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601U (10 June 2006); https://doi.org/10.1117/12.683564

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