Paper
20 October 2006 Managing high-accuracy and fast convergence in OPC
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Abstract
The transition to the 65nm technology node requires improved methodologies for model based optical proximity correction. The approaches used for previous generations might not be able to deliver the high accuracy which is necessary for gate patterning on high performance or low leakage circuits. A new categorization scheme for OPC fragments will be introduced, which then allows independent optimization for various OPC tool parameters. The feasibility of this technique will be demonstrated by quantifying the OPC convergence through iterations, which emphasizes the performance gain in OPC accuracy and runtime.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Klaus Herold, Norman Chen, and Ian P. Stobert "Managing high-accuracy and fast convergence in OPC", Proc. SPIE 6349, Photomask Technology 2006, 634924 (20 October 2006); https://doi.org/10.1117/12.686725
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CITATIONS
Cited by 4 scholarly publications and 4 patents.
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KEYWORDS
Optical proximity correction

Tolerancing

Semiconductors

Data modeling

Optical lithography

Process modeling

Photomasks

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