Process development for EUV mask production

Tsukasa Abe; Akiko Fujii; Shiho Sasaki; Hiroshi Mohri; Naoya Hayashi; Tsutomu Shoki; Takeyuki Yamada; Osamu Nozawa; Ryo Ohkubo; Masao Ushida

doi:10.1117/12.692519

20 October 2006 Process development for EUV mask production

Tsukasa Abe, Akiko Fujii, Shiho Sasaki, Hiroshi Mohri, Naoya Hayashi, Tsutomu Shoki, Takeyuki Yamada, Osamu Nozawa, Ryo Ohkubo, Masao Ushida

Author Affiliations +

Proceedings Volume 6349, Photomask Technology 2006; 63493G (2006) https://doi.org/10.1117/12.692519
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

Absorber layer patterning process for low reflectivity tantalum boron nitride (LR-TaBN) absorber layer and chromium nitride (CrN) buffer layer were improved to satisfy high resolution pattern and high level critical dimension (CD) control. To make 100nm and smaller pattern size, under 300nm resist thickness was needed because of resist pattern collapse issue. We developed absorber layer dry etching process for 300nm thickness resist. Absorber layer patterning was done by a consequence of carbon fluoride gas process and chlorine gas process. We evaluated both gas processes and made clear each dry etching character. Sufficient resist selectivity, vertical side wall, good CD control and low buffer layer damage were obtained. Then, we evaluated how buffer layer dry etching affects EUV reflectivity. Finally, we evaluated EUV mask pattern defect inspection and defect repair. Sufficient contrast of mask pattern image and good repair result were obtained using DUV inspection tool and AFM nano-machining tool, respectively.

Citation Download Citation

Tsukasa Abe, Akiko Fujii, Shiho Sasaki, Hiroshi Mohri, Naoya Hayashi, Tsutomu Shoki, Takeyuki Yamada, Osamu Nozawa, Ryo Ohkubo, and Masao Ushida "Process development for EUV mask production", Proc. SPIE 6349, Photomask Technology 2006, 63493G (20 October 2006); https://doi.org/10.1117/12.692519

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