A study of process extension technologies

Sang-Kon Kim

doi:10.1117/12.712062

22 March 2007 A study of process extension technologies

Sang-Kon Kim

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65193X (2007) https://doi.org/10.1117/12.712062
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Current 193 nm optical lithography and commercially available 193 nm resists are pushed far beyond previously expected critical dimension by using the process extension technology for the resolution enhancements technology. This paper deals with three kinds of process extension technologies such as thermal treatment, polarization, and double patterning. Those technologies are tried to model and analyze. Supposed the 50% pattern shrinkage due to thermal treatment, 25% resolution enhancement due to polarization, and the 50% pattern shrinkage due to double patterning, an effective combination can generate a sub-50 nm pattern. When pattern size is smaller, optical proximity effects are more severe. After describing optical proximity effects for each of technologies, optical proximity correction methods are discussed.

Citation Download Citation

Sang-Kon Kim "A study of process extension technologies", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193X (22 March 2007); https://doi.org/10.1117/12.712062

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