Some non-resist component contributions to LER and LWR in 193-nm lithography

Takanori Kudo; Srinivasan Chakrapani; Guanyang Lin; Clement Anyadiegwu; Charito Antonio; Deepa Parthasarathy; Ralph R. Dammel; Munirathna Padmanaban

doi:10.1117/12.713221

6 April 2007 Some non-resist component contributions to LER and LWR in 193-nm lithography

Takanori Kudo, Srinivasan Chakrapani, Guanyang Lin, Clement Anyadiegwu, Charito Antonio, Deepa Parthasarathy, Ralph R. Dammel, Munirathna Padmanaban

Author Affiliations +

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 651941 (2007) https://doi.org/10.1117/12.713221
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Improvement of line edge roughness (LER) and line width roughness (LWR) is required for integration of semiconductor devices. This paper describes various process factors affecting LER/LWR of 193 nm resists such as mask layout (bright field/dark field), pitches, optical settings, substrates, film thickness, baking temperature and development condition. The origins of line roughness are discussed in view of aerial image contrast, transmittance of resists and pattern profiles. Bright field mask exhibited lower LER/LWR values than dark field mask, LER/LWR deteriorated as larger pitches and illumination condition affected roughness and these results are explained using normalized image log-slope (NILS). BARC dependence of line roughness is explained by pattern profile difference due to interactions between resist and BARC and in some cases BARC reflectivity. Contributions of film thickness, SB & PEB temperature and development condition to line roughness are also reported.

Citation Download Citation

Takanori Kudo, Srinivasan Chakrapani, Guanyang Lin, Clement Anyadiegwu, Charito Antonio, Deepa Parthasarathy, Ralph R. Dammel, and Munirathna Padmanaban "Some non-resist component contributions to LER and LWR in 193-nm lithography", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 651941 (6 April 2007); https://doi.org/10.1117/12.713221

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE