ArF Immersion Lithography for 45-nm and beyond

Akihiro Yamada

doi:10.1117/12.729263

14 May 2007 ArF Immersion Lithography for 45-nm and beyond

Akihiro Yamada

Author Affiliations +

Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 66071G (2007) https://doi.org/10.1117/12.729263
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan

Abstract

Water-based ArF Immersion Lithography has overcome obstacles and enabled the 45nm node of mass products. Canon has developed immersion exposure system the FPA7000 AS7 for 45nm node. The new platform, the FPA-7000, is designed to cover multiple generations. The lens performance about wavefront aberration of the FPA-7000AS7 is predicted to be less than 4m&lgr;. The illumination performance meets the target required for the 45nm node. A solution tool for optimization is introduced to be connected with the FPA-7000. Moreover, latest studies of immersion, such as nozzle pressure, temperature control and defect inspection result are reported, and also discusses the possibility of high-refractive-index immersion.

Citation Download Citation

Akihiro Yamada "ArF Immersion Lithography for 45-nm and beyond", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66071G (14 May 2007); https://doi.org/10.1117/12.729263

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE