Paper
15 May 2007 Picosecond time-resolved XAFS measurements using femtosecond laser-produced plasma soft x-ray as a probe
Hidetoshi Nakano, Katsuya Oguri, Yasuaki Okano, Tadashi Nishikawa
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Abstract
We have demonstrated the sub-10-ps time-resolved measurement of the x-ray absorption fine structure (XAFS) in laser-excited Si foil by using a femtosecond laser-produced plasma soft x-ray as a probe. We observed a rapid change and recovery in the absorption structure near its LII,III edge induced by 100-fs laser pulse irradiation when the laser intensity was in the 109-1010 W/cm2 range. When the incident laser intensity was of the order of 1012 W/cm2, which is higher than the damage threshold, the extended x-ray absorption fine structure (EXAFS) signals clearly revealed inter atomic distance expansion and structural disordering as well as a change in the electronic structure caused by the production of liquid Si. We also describe our recent results on spatio-temporally resolved soft x-ray absorption in an expanding ablated particle cloud from aluminum that was heated with a 1014-W/cm2, 100-fs laser pulse by using an imaging system for time-resolved soft x-ray absorption spectroscopy.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hidetoshi Nakano, Katsuya Oguri, Yasuaki Okano, and Tadashi Nishikawa "Picosecond time-resolved XAFS measurements using femtosecond laser-produced plasma soft x-ray as a probe", Proc. SPIE 6614, Laser Optics 2006: Superintense Light Fields and Ultrafast Processes, 661409 (15 May 2007); https://doi.org/10.1117/12.740195
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KEYWORDS
X-rays

Absorption

Pulsed laser operation

Silicon

Plasma

Picosecond phenomena

Semiconductor lasers

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