PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Plasma-assisted epitaxy has been demonstrated as one possible process for the ZnO growth, which is processed at low
temperatures below 400oC using oxygen-plasma excited by radio-frequency power at 13.56MHz. This paper is focused
on the plasma-assisted epitaxial growth of ZnO layer concerned with shallow acceptor doping using N2+O2 gas plasma
and high-quality undoped-ZnO growth using a novel buffer layer consisted of very thin (below 1nm-thick) strained Ti2O3
on A-sapphire. Donor-acceptor pair emission was clearly observed at 3.273eV in low temperature photoluminescence
spectrum of nitrogen-doped PAE-ZnO layer grown in Zn-rich supply condition and the activation energy of the shallow
acceptor was determined about 132meV. The doping feature of nitrogen related with the oxygen vacancy is also
expected by the photoluminescence study. High-quality ZnO layer with smooth surface including fine hexagonal
pyramids was grown on the buffer layer at the growth temperature as low as 340oC with the photoluminescence spectrum
dominated by free-exciton emissions at 10K. RHEED observations indicated the ZnO on the thin buffer layer was
epitaxially grown toward c-axis with an in-plane relation ship of [-12-10]ZnO//[1-104]Al2O3 without any rotational
domains.
Satoshi Yamauchi
"Plasma-assisted epitaxial growth of nitrogen-doped and high-quality ZnO thin films", Proc. SPIE 6895, Zinc Oxide Materials and Devices III, 689506 (15 February 2008); https://doi.org/10.1117/12.774945
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Satoshi Yamauchi, "Plasma-assisted epitaxial growth of nitrogen-doped and high-quality ZnO thin films," Proc. SPIE 6895, Zinc Oxide Materials and Devices III, 689506 (15 February 2008); https://doi.org/10.1117/12.774945