Near-field fluorescence lifetime imaging of semiconductor interfaces used in laser cooling

Daniel A. Bender; Mansoor Sheik-Bahae

doi:10.1117/12.765236

11 February 2008 Near-field fluorescence lifetime imaging of semiconductor interfaces used in laser cooling

Proceedings Volume 6907, Laser Refrigeration of Solids; 690704 (2008) https://doi.org/10.1117/12.765236
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Simultaneous near-field fluorescence lifetime imaging and atomic force microscopy identify radiative, interface and subsurface defect recombination sites in GaAs/GaInP heterostructures. This instrumentation helps characterize samples for laser cooling.

Citation Download Citation

Daniel A. Bender and Mansoor Sheik-Bahae "Near-field fluorescence lifetime imaging of semiconductor interfaces used in laser cooling", Proc. SPIE 6907, Laser Refrigeration of Solids, 690704 (11 February 2008); https://doi.org/10.1117/12.765236

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