Paper
13 February 2008 (AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensors
J. Wagner, Ch. Y. Wang, C.-C. Röhlig, M. Maier, M. Kunzer, T. Passow, W. Schirmacher, W. Pletschen, V. Cimalla, K. Köhler, O. Ambacher
Author Affiliations +
Abstract
There is a high demand for compact low-cost ozone (O3) sensors. It has been shown that indium oxide (In2O3) thin films grown by metal-organic vapor-phase epitaxy (MOVPE) act as an O3 sensitive material, which can be activated at roomtemperature by ultraviolet (UV) light. In the present work we integrated the In2O3 sensing thin film and an (AlGaIn)N based near-UV LED back-to-back on a single sensor chip. The integrated In2O3 film-LED sensor was exposed to varying ozone concentrations ranging from 38 ppb to 726 ppb and found to be sensitive to even the lowest O3 concentration.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Wagner, Ch. Y. Wang, C.-C. Röhlig, M. Maier, M. Kunzer, T. Passow, W. Schirmacher, W. Pletschen, V. Cimalla, K. Köhler, and O. Ambacher "(AlGaIn)N UV LEDs for integrated metal-oxide based ozone sensors", Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 69100X (13 February 2008); https://doi.org/10.1117/12.761128
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KEYWORDS
Ozone

Sensors

Light emitting diodes

Near ultraviolet

Electroluminescence

Quantum wells

Gallium nitride

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