Integration issues in step and repeat UV nanoimprint lithography

C. Charpin-Nicolle; M. Irmscher; M. Pritschow; B. Vratzov; H. van Vossen; J. Chiaroni; J. Massin; P. Gubbini

doi:10.1117/12.790732

1 April 2008 Integration issues in step and repeat UV nanoimprint lithography

C. Charpin-Nicolle, M. Irmscher, M. Pritschow, B. Vratzov, H. van Vossen, J. Chiaroni, J. Massin, P. Gubbini

Author Affiliations +

Proceedings Volume 6921, Emerging Lithographic Technologies XII; 69212I (2008) https://doi.org/10.1117/12.790732
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Nanoimprint Lithography appears to be a competitive candidate for Next Generation Lithography in semiconductor industry due to its advantages concerning resolution and cost effectiveness. Moreover, UV-Nanoimprint Lithography (UV-NIL) should enable to reach good overlay values, which is also a major criterion for integration. In this paper, we present first integration results which were obtained on lines and contact holes. A specific template was designed for this purpose in collaboration with CEA-LETI, IMS and Molecular Imprints. This template was characterized by using various techniques (optical and SEM techniques) and showed quite a good quality of the template; in particular, 50 nm holes were defined. Molecular Imprints process was then tested by using Imprio55® at MESA+ Research Institute, University of Twente (Netherlands). In these experiments, 37 4.8 cm² fields were imprinted on Double Side Polished wafers. For each field, 52 droplets were dispensed with various volumes. Resolution and non-uniformity were evaluated after imprinting. Then etching tests were performed.

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C. Charpin-Nicolle, M. Irmscher, M. Pritschow, B. Vratzov, H. van Vossen, J. Chiaroni, J. Massin, and P. Gubbini "Integration issues in step and repeat UV nanoimprint lithography", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69212I (1 April 2008); https://doi.org/10.1117/12.790732

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