Effect of nanofiltration on photochemical integrity

H. Zhang; A. Wu; J. Wei; R. Buschjost

doi:10.1117/12.772815

3 April 2008 Effect of nanofiltration on photochemical integrity

H. Zhang, A. Wu, J. Wei, R. Buschjost

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 69233H (2008) https://doi.org/10.1117/12.772815
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

In its relatively short history of use, the formulation complexity of bottom anti-reflective coatings (BARC) for semiconductor fabrication has become an enabling technology for nanoscale chip geometries. As lithography advancements are mastered, process material and equipment capabilities must follow. Typical photochemical solutions contain a variety of additives, often in trace amounts. The slightest unintended alteration of the photochemical formulation's chemical composition could have a detrimental effect on lithography process yield. The added complexity of BARC formulations leads suppliers of liquid microcontamination control technologies to develop filtration solutions that effectively remove the destructive particles and gels from BARC while maintaining the formulation's integrity during the filtration process. In a joint study, Entegris and Brewer Science discovered that nylon has proven to be less chemically resistant to attack by certain BARC materials than next-generation ultrahigh molecular weight polyethylene (UPE) membrane materials. Essentially, UPE membrane-based filters remove the damaging particulate and gels without altering the delicate chemical formulation of BARC materials. It has also been experimentally proven that the UPE-based membrane maintains its material integrity during the filters' lifetime. This provides new opportunities for fabs and photochemical suppliers to enhance the performance, repeatability and reliability of semiconductor lithography processes.

Citation Download Citation

H. Zhang, A. Wu, J. Wei, and R. Buschjost "Effect of nanofiltration on photochemical integrity", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69233H (3 April 2008); https://doi.org/10.1117/12.772815

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