Stress effect on electronic characteristics in heterojunction of (n+)nanocrystalline/(p+)crystalline Si

Wensheng Wei

doi:10.1117/12.792152

11 March 2008 Stress effect on electronic characteristics in heterojunction of (n⁺)nanocrystalline/(p⁺)crystalline Si

Wensheng Wei

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 698403 (2008) https://doi.org/10.1117/12.792152
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

A heterojunction of heavy phosphorus doped hydrogenated nanocrystalline Si (nc-Si:H) film with p⁺-type crystalline Si wafer was prepared and measured to investigate stress effect on electronic characteristics. According to electrical experiments, the yielded structure was demonstrated as a semiconductor backward diode. Energy band gap of nc-Si:H was inferred to equal that of amorphous Si:H because nanocrystals imbedded in amorphous Si:H matrices. Mechanical stress effect on electronic characteristics for the operated unit was interpreted by stress-induced defect states since a mass of defects distributed in inhomogenous material. Reverse current showing good linearly dependent on applied stress with a effectual method of conversing mechanical signal to electronic one before breakdown was indicated.

Citation Download Citation

Wensheng Wei "Stress effect on electronic characteristics in heterojunction of (n⁺)nanocrystalline/(p⁺)crystalline Si", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 698403 (11 March 2008); https://doi.org/10.1117/12.792152

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