An end point detection method based on induced current and an automatic control device for an ion etching system

S. B. Simakin; G. D. Kuznetsov; E. A. Mitrofanov

doi:10.1117/12.802363

29 April 2008 An end point detection method based on induced current and an automatic control device for an ion etching system

S. B. Simakin, G. D. Kuznetsov, E. A. Mitrofanov

Author Affiliations +

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70250G (2008) https://doi.org/10.1117/12.802363
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

This work concerns with an industrial method and a device for precise automatic end point detection of ion and ion beam etching of thin films on the surface of heterostructures. The main principle of this method is measuring of the current between a film on a surface of a substrate and the earth (zero potential) during ion or ion beam bombarding. This kind of current, especially if the film is made of dielectric, is called induced current. It has been found that when the film thickness gets value in the range of 8-10 nm, it is registered a jump of induced current. If this jump of the current can be registered, the etching process can be stopped precisely. The main feature of this method and device is using as a probe to measure ion beam parameters. These measuring results can do information about ion beam density, stability, pulses of accelerating voltage etc. Joint measuring of two kinds of current, their comparison, treatment of signals, filtering signals of voltage pulses and other peculiarities make it possible to stop processes with great accuracy.

Citation Download Citation

S. B. Simakin, G. D. Kuznetsov, and E. A. Mitrofanov "An end point detection method based on induced current and an automatic control device for an ion etching system", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250G (29 April 2008); https://doi.org/10.1117/12.802363

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