Increasing the predictability of AIMS measurements by coupling to resist simulations

Balint Meliorisz; Andreas Erdmann; Thomas Schnattinger; Ulrich Ströβner; Thomas Scherübl; Peter De Bisschop; Vicky Philipsen

doi:10.1117/12.793098

19 May 2008 Increasing the predictability of AIMS measurements by coupling to resist simulations

Balint Meliorisz, Andreas Erdmann, Thomas Schnattinger, Ulrich Ströβner, Thomas Scherübl, Peter De Bisschop, Vicky Philipsen

Author Affiliations +

Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70282S (2008) https://doi.org/10.1117/12.793098
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan

Abstract

This paper studies the application of resist models to AIMS^TM images. Measured AIMS^TM data were coupled with resist simulations of the Fraunhofer IISB research and development lithography simulator Dr.LiTHO and with a compact resist model developed by Carl Zeiss SMS. Through-focus image data of the AIMS^TM are transformed into a bulk image--the intensity distribution within the resist. This bulk image is used to compute the concentration of photo-acid after exposure and the following resist processing. In the result a resist profile is obtained, which can be used to extract the printed wafer linewidth and other data. Additionally, a compact resist model developed by Carl Zeiss SMS was directly applied to the AIMS^TM data. The described procedures are used to determine dose latitudes for lines and spaces with different pitches. The obtained data are compared to actual wafer prints for a 1.2 NA system.

Citation Download Citation

Balint Meliorisz, Andreas Erdmann, Thomas Schnattinger, Ulrich Ströβner, Thomas Scherübl, Peter De Bisschop, and Vicky Philipsen "Increasing the predictability of AIMS measurements by coupling to resist simulations", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282S (19 May 2008); https://doi.org/10.1117/12.793098

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