Growth and characterization of short-period InAs/GaSb superlattice photoconductors

Jie Guo; Weigo Sun; Yingqiang Xu; Zhiqiang Zhou; Zhichuan Niu

doi:10.1117/12.791978

3 September 2008 Growth and characterization of short-period InAs/GaSb superlattice photoconductors

Jie Guo, Weigo Sun, Yingqiang Xu, Zhiqiang Zhou, Zhichuan Niu

Proceedings Volume 7055, Infrared Systems and Photoelectronic Technology III; 70550U (2008) https://doi.org/10.1117/12.791978
Event: Photonic Devices + Applications, 2008, San Diego, California, United States

Abstract

The short- and mid-wavelength infrared detectors based on short period type II superlattices (SLs) InAs (2ML) / GaSb (8ML) and InAs (8ML) / GaSb (8ML) were grown by molecular-beam epitaxy on semi-insulating GaAs substrates. An interfacial misfit mode AlSb quantum dot layer and a thick GaSb layer were grown as buffer layers. Room-temperature optical transmittance spectra showed clear absorption edge at ~2μm and ~5μm. The 50% cutoff wavelength of the two photoconductors was 2.1μm and 5.05μm in photoresponse at 77K respectively. The blackbody detectivity was beyond 2×10⁸ cmHz^1/2/W at 77K and 1×10⁸ cmHz^1/2/W at room temperature with 8 V/cm bias.

Citation Download Citation

Jie Guo, Weigo Sun, Yingqiang Xu, Zhiqiang Zhou, and Zhichuan Niu "Growth and characterization of short-period InAs/GaSb superlattice photoconductors", Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 70550U (3 September 2008); https://doi.org/10.1117/12.791978

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