Paper
24 February 2009 Deterministic coupling of site-selected InAs/InP quantum dots to 2D photonic crystal microcavities
Dan Dalacu, Danny Kim, Simon Frédérick, Jean Lapointe, Anthony J. Springthorpe, Philip J. Poole, Geof C. Aers, Robin L. Williams
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Abstract
Site-selective epitaxy and standard electron beam lithography techniques are employed to spatially couple small InAs/InP quantum dot ensembles to 2D photonic crystal membrane cavities. The small InAs quantum dot ensembles, consisting of just a few dots, are localized to areas 100x100nm2 at predetermined positions dictated by a nanotemplate consisting of InP pyramids. The dots are embedded in a 2D membrane using a planarization growth step and single missing-hole defect cavities are fabricated in the membrane with the defect sites centered on the dot ensembles. This spatially couples the ensembles to the χ-dipole mode of the cavities. Emission from the cavities shows the expected mode structure, with quality factors of 2000.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dan Dalacu, Danny Kim, Simon Frédérick, Jean Lapointe, Anthony J. Springthorpe, Philip J. Poole, Geof C. Aers, and Robin L. Williams "Deterministic coupling of site-selected InAs/InP quantum dots to 2D photonic crystal microcavities", Proc. SPIE 7211, Physics and Simulation of Optoelectronic Devices XVII, 72110H (24 February 2009); https://doi.org/10.1117/12.816143
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KEYWORDS
Quantum dots

Photonic crystals

Epitaxy

Optical alignment

Electron beam lithography

Optical microcavities

Indium arsenide

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