High volume 850nm oxide VCSEL development for high bandwidth optical data link applications

Chen Ji; Jingyi Wang; David Söderstrom; Kuo-Liang Chen; Ramana Murty; Mark Keever; Laura Giovane; Jeong-Ki Hwang; Gim-Hong Koh; Jason Tan; Jason Chu

doi:10.1117/12.808349

6 February 2009 High volume 850nm oxide VCSEL development for high bandwidth optical data link applications

Chen Ji, Jingyi Wang, David Söderstrom, Kuo-Liang Chen, Ramana Murty, Mark Keever, Laura Giovane, Jeong-Ki Hwang, Gim-Hong Koh, Jason Tan, Jason Chu

Author Affiliations +

Proceedings Volume 7229, Vertical-Cavity Surface-Emitting Lasers XIII; 722904 (2009) https://doi.org/10.1117/12.808349
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Directly modulated 850nm oxide VCSEL is a key enabling technology for short reach, high speed data-communication applications. Current commercially available optical transceiver products operate at data rate up to 10Gb/s per channel, for aggregate data rate of 70Gb/s and beyond, in the case of parallel optical data link. High volume, low cost, over temperature optical modulation speed, spectral width, output power, thermal power budget, large signal electrical interaction with the IC driver, and reliability are some of the key requirements driving the 850nm oxide VCSEL development. In this paper, we discuss some of the engineering issues investigated for developing a viable oxide VCSEL product operating at 10Gb/s per channel and higher data rate.

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Chen Ji, Jingyi Wang, David Söderstrom, Kuo-Liang Chen, Ramana Murty, Mark Keever, Laura Giovane, Jeong-Ki Hwang, Gim-Hong Koh, Jason Tan, and Jason Chu "High volume 850nm oxide VCSEL development for high bandwidth optical data link applications", Proc. SPIE 7229, Vertical-Cavity Surface-Emitting Lasers XIII, 722904 (6 February 2009); https://doi.org/10.1117/12.808349

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