Modulation Performance Of 1.3 and 1.51 µm InGaAsP Buried Crescent Injection Lasers With Semi-Insulating Current Confinement Layer

W. H. Cheng; C. B. Su; K. D. Buehring; C. P. Chien; J. W. Ure; D. Perrachione; D. Renner; K. L. Hess; S. W. Zehr

doi:10.1117/12.937683

14 January 1987 Modulation Performance Of 1.3 and 1.51 µm InGaAsP Buried Crescent Injection Lasers With Semi-Insulating Current Confinement Layer

W. H. Cheng, C. B. Su, K. D. Buehring, C. P. Chien, J. W. Ure, D. Perrachione, D. Renner, K. L. Hess, S. W. Zehr

Author Affiliations +

Proceedings Volume 0723, Progress in Semiconductor Laser Diodes; (1987) https://doi.org/10.1117/12.937683
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

A hybrid growth technique has been used to fabricate low threshold 1.51 and 1.3 µm InGaAsP buried crescent (BC) injection lasers with a semi-insulating current confinement layer. The technique involves a first stage of low pressure metal organic chemical vapor deposition (LPMOCVD) followed by a liquid phase epitaxy (LPE) stage. The BC lasers exhibit CW threshold currents as low as 12 mA at 25'C, high yield, differential quantum efficiency over 41%, and output power more than 18 mW. Small-signal modulation response to 3.5 GHz and 5 GHz has been obtained for 1.51 and 1.3 um laser respectively. The BC lasers show an initial small degradation rate of 1%/kh at 50'C which gives an estimated operating lifetime of 47 years at 25'C.

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W. H. Cheng, C. B. Su, K. D. Buehring, C. P. Chien, J. W. Ure, D. Perrachione, D. Renner, K. L. Hess, and S. W. Zehr "Modulation Performance Of 1.3 and 1.51 µm InGaAsP Buried Crescent Injection Lasers With Semi-Insulating Current Confinement Layer", Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); https://doi.org/10.1117/12.937683

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