Paper
3 February 2009 Metamorphic InGaAs telecom lasers on GaAs
Author Affiliations +
Abstract
We demonstrate GaAs-based metamorphic lasers in the 1.3-1.55 μm telecom range grown by molecular beam epitaxy. The introduction of dopants in a compositionally graded layer is shown to significantly influence material properties, as well as having impact on the laser device design. Investigating and understanding of strain relaxation and dislocation dynamics is useful for improving material quality, performance and robustness of metamorphic devices. We demonstrate pulsed lasing up to 1.58 μm and continuous wave lasing at 1.3 μm at room temperature with low threshold currents.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Tångring, Y. X. Song, D. H. Wu, Z. C. Niu, S. M. Wang, and A. Larsson "Metamorphic InGaAs telecom lasers on GaAs", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 723003 (3 February 2009); https://doi.org/10.1117/12.808787
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Cited by 1 scholarly publication.
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KEYWORDS
Gallium arsenide

Indium gallium arsenide

Gallium

Quantum wells

Doping

Aluminum

Silicon

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