Paper
3 February 2009 New approaches towards the understanding of the catastrophic optical damage process in in-plane diode lasers
Jens W. Tomm, Mathias Ziegler, Vadim Talalaev, Clemens Matthiesen, Thomas Elsaesser, Marwan Bou Sanayeh, Peter Brick, Martin Reufer
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Abstract
The microscopic processes accompanying the catastrophic optical damage process in semiconductor lasers are discussed. For 808 and 650 nm edge-emitting broad-area devices relevant parameters such as surface recombination velocities, bulk and front facet temperatures are determined and discussed. Facet temperatures vs. laser output and temperature profiles across laser stripes reveal a strong correlation to near-field intensity and degradation signatures. Furthermore, the dynamics of the fast catastrophic optical damage process is analyzed by simultaneous high-speed infrared thermal and optical imaging of the emitter stripe. The process is revealed as fast and spatially confined. It is connected with a pronounced impulsive temperature flash detected by a thermocamera.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jens W. Tomm, Mathias Ziegler, Vadim Talalaev, Clemens Matthiesen, Thomas Elsaesser, Marwan Bou Sanayeh, Peter Brick, and Martin Reufer "New approaches towards the understanding of the catastrophic optical damage process in in-plane diode lasers", Proc. SPIE 7230, Novel In-Plane Semiconductor Lasers VIII, 72300V (3 February 2009); https://doi.org/10.1117/12.806701
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Semiconductor lasers

Temperature metrology

Thermography

Optical damage

Cameras

Absorption

Near field optics

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