Development progress of optics for EUVL at Nikon

Katsuhiko Murakami; Tetsuya Oshino; Hiroyuki Kondo; Masayuki Shiraishi; Hiroshi Chiba; Hideki Komatsuda; Kazushi Nomura; Jin Nishikawa

doi:10.1117/12.813638

18 March 2009 Development progress of optics for EUVL at Nikon

Katsuhiko Murakami, Tetsuya Oshino, Hiroyuki Kondo, Masayuki Shiraishi, Hiroshi Chiba, Hideki Komatsuda, Kazushi Nomura, Jin Nishikawa

Author Affiliations +

Proceedings Volume 7271, Alternative Lithographic Technologies; 72711Z (2009) https://doi.org/10.1117/12.813638
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Full-field EUV exposure tool named EUV1 integrated and exposure experiments were started with the numerical aperture of the projection optics of 0.25 and conventional partial coherent illumination with the coherence factor of 0.8. 32nm elbow patterns were resolved in full arc field in static exposure. In the central area 25nm line-and-space patterns were resolved. In scanning exposure, 32nm line-and-space patterns were successfully exposed on a full wafer. Wavefront error of the projection optics was improved to 0.4nmRMS. Flare impact on imaging was clarified depend on the flare evaluation using Kirk test. RET fly's eye mirrors and reflection-type SPF are investigated to increase throughput. High-NA projection optics design is also reviewed.

Citation Download Citation

Katsuhiko Murakami, Tetsuya Oshino, Hiroyuki Kondo, Masayuki Shiraishi, Hiroshi Chiba, Hideki Komatsuda, Kazushi Nomura, and Jin Nishikawa "Development progress of optics for EUVL at Nikon", Proc. SPIE 7271, Alternative Lithographic Technologies, 72711Z (18 March 2009); https://doi.org/10.1117/12.813638

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