Optimization of BSE-detector for e-beam direct write lithography

H. Alves; P. Hahmann; M. Slodowski; C. G. Frase; D. Gnieser; Klaus-Peter Johnsen; H. Bosse

doi:10.1117/12.814156

18 March 2009 Optimization of BSE-detector for e-beam direct write lithography

H. Alves, P. Hahmann, M. Slodowski, C. G. Frase, D. Gnieser, Klaus-Peter Johnsen, H. Bosse

Proceedings Volume 7271, Alternative Lithographic Technologies; 72712O (2009) https://doi.org/10.1117/12.814156
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

In this work, we investigated possible geometry optimizations of backscattered electron (BSE) detectors in order to significantly improve the signal to noise ratio (SNR) of shallow Si-topographic marks. To achieve this, Monte Carlo simulations of the BSE angular distribution as well as of the BSE exit position were performed. A comparison of some theoretical calculations with the respective experimental results allowed us to qualify the theoretical results. Based on these results, we are able to present an optimized BSE detector design featuring a significant improvement of the measured SNR.

Citation Download Citation

H. Alves, P. Hahmann, M. Slodowski, C. G. Frase, D. Gnieser, Klaus-Peter Johnsen, and H. Bosse "Optimization of BSE-detector for e-beam direct write lithography", Proc. SPIE 7271, Alternative Lithographic Technologies, 72712O (18 March 2009); https://doi.org/10.1117/12.814156

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