Cr migration on 193nm binary photomasks

John Bruley; Geoffrey Burr; Robert E. Davis; Philip Flaitz; William D. Hinsberg; Frances A. Houle; Dolores C. Miller; Michael Pike; Jed Rankin; Alfred Wagner; Andrew Watts

doi:10.1117/12.813934

23 March 2009 Cr migration on 193nm binary photomasks

John Bruley, Geoffrey Burr, Robert E. Davis, Philip Flaitz, William D. Hinsberg, Frances A. Houle, Dolores C. Miller, Michael Pike, Jed Rankin, Alfred Wagner, Andrew Watts

Author Affiliations +

Proceedings Volume 7272, Metrology, Inspection, and Process Control for Microlithography XXIII; 727215 (2009) https://doi.org/10.1117/12.813934
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

A new type of chrome-on-glass (COG) photomask defect was observed in 2006. Absorber material migrated into vias on dark field masks, partially obscuring the incident 193nm light and thereby causing the imaged photoresist to be underexposed. Through detailed characterization of new and defective photomasks and their histories it was determined that the migration is not caused by any unusual line events or faulty mask handling procedures. Rather, it is an inevitable result of mask use under specific conditions. Four essential elements have been identified: the presence of Cr, 193nm light exposure, charge, and water vapor and their roles elucidated through modeling studies and existing literature. We have reproduced Cr migration in the laboratory, demonstrating that these four elements are necessary and sufficient for this type of defect to occur. The only way to avoid Cr migration is to avoid reactions with water vapor.

Citation Download Citation

John Bruley, Geoffrey Burr, Robert E. Davis, Philip Flaitz, William D. Hinsberg, Frances A. Houle, Dolores C. Miller, Michael Pike, Jed Rankin, Alfred Wagner, and Andrew Watts "Cr migration on 193nm binary photomasks", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 727215 (23 March 2009); https://doi.org/10.1117/12.813934

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