Track optimization and control for 32nm node double patterning and beyond

David Laidler; Craig Rosslee; Koen D'havé; Philippe Leray; Len Tedeschi

doi:10.1117/12.814849

23 March 2009 Track optimization and control for 32nm node double patterning and beyond

David Laidler, Craig Rosslee, Koen D'havé, Philippe Leray, Len Tedeschi

Author Affiliations +

Proceedings Volume 7272, Metrology, Inspection, and Process Control for Microlithography XXIII; 727236 (2009) https://doi.org/10.1117/12.814849
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Given the increasingly stringent CD requirements for double patterning at the 32nm node and beyond the question arises as to how best to correct for CD non-uniformity at litho and etch. For example, is it best to apply a dose correction over the wafer while keeping the PEB plate as uniform as possible, or should the dose be kept constant and PEB CD tuning used to correct. In this work we present experimental data, obtained on a state of the art ASML XT:1900Gi and Sokudo RF^3S cluster, on both of these approaches, as well as on a combined approach utilizing both PEB CD tuning and dose correction.

Citation Download Citation

David Laidler, Craig Rosslee, Koen D'havé, Philippe Leray, and Len Tedeschi "Track optimization and control for 32nm node double patterning and beyond", Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII, 727236 (23 March 2009); https://doi.org/10.1117/12.814849

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