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11 May 2009 CD performance evaluation according to advanced marking parameter
Suk-Ky Yoon, Seung-Yun Kim, Kyoeong-Mee Yeon, Chan Lim, Sung-Jin Choi, Ja-Hwa Kim, Lee-Ju Kim, Young-Rok Cho, Hong-Seok Kim
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 737924 (2009) https://doi.org/10.1117/12.824317
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
There is no objection that Mean to Target (MTT) and Uniformity of CD (Critical Dimension) are the most important parameters to confirm the quality of mask. So process engineer try to improve these value and metrology engineer have been struggled to provide the accurate and repeatable CD information. One of method for this goal is auto-measurement with job from pattern design. Auto-measurement helps to remove error from human and improve reproducibility of CD. The recent tools are capable to interface with marking generation program so we can measure with auto-marked job without any manual measurement. However, the enhancement design rule of lithography requests the smaller CD size and more complicated pattern layout. These worst factors can be brought about inaccurate CD result due to wrong measurement job from auto-marking program. Therefore metrology engineer have to consider more optimized auto-measurement methodology as well as to use the most advanced measurement tool. In this paper, we are focused on the CD measurement methodology which is the optimized measurement condition according to pattern shape by using the advanced marking parameter when generate auto-measurement job. In order to find the best condition, we designed test patterns containing OPC (Optical Proximity Correction) and printed on the plate. And we made two types of auto-measurement jobs. One is applied with the advanced marking parameters and the other is applied with the normal marking parameters. We measured the plate with these two jobs for each test item on LWM9000. Finally, we compared results from advanced and normal parameter and calculate how much CD can be different for each test item. Through the test result, we can find the best measurement parameter for each kinds of pattern and get more accurate CD result.
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Suk-Ky Yoon, Seung-Yun Kim, Kyoeong-Mee Yeon, Chan Lim, Sung-Jin Choi, Ja-Hwa Kim, Lee-Ju Kim, Young-Rok Cho, and Hong-Seok Kim "CD performance evaluation according to advanced marking parameter", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 737924 (11 May 2009); https://doi.org/10.1117/12.824317
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KEYWORDS
Critical dimension metrology
Optical proximity correction
Photomasks
Metrology
Process engineering
Error analysis
Interfaces
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